Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-04-05
2011-04-05
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S052000, C438S053000, C438S488000, C438S723000
Reexamination Certificate
active
07919345
ABSTRACT:
A method is disclosed of fabricating micromechanical components provided with free-standing microstructures or membranes with predetermined mechanical stress, by initially depositing a sacrificial layer on a substrate followed by depositing a polysilicon layer on the sacrificial layer by a gaseous phase deposition and, finally, at least partial removal of the sacrificial layer. During deposition of the polysilicon layer, the process pressure selected determined the type of stress in the polysilicon layer, and the value of the stress is set by the process temperature selected. The process pressure is above the pressure range used in LPCVD reactors.
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Kirsten Mario
Lange Peter
Riethmueller Werner
Wenk Beatrice
Duong Khanh B
Fraunhofer-Gesellschaft zur Forderung der ange-wandten Forschung
Renner Kenner Greive Bobak Taylor & Weber
Smith Zandra
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