Method of fabricating microconnectors

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S455000, C438S459000

Reexamination Certificate

active

07393774

ABSTRACT:
A method of fabricating microconnectors. A wafer is provided, and a dielectric layer is formed on a first surface of the wafer. The dielectric layer is bonded to a support wafer, and a thinning process is performed. A second surface of the wafer is then bonded to the support wafer, and a conductive wiring pattern is formed on the dielectric layer. An insulating layer is formed on the dielectric layer and the conductive wiring pattern. A portion of the insulating layer is removed to expose the conductive wiring pattern, and a portion of the dielectric layer and the wafer is removed to divide the wafer into a plurality of microconnectors.

REFERENCES:
patent: 6927471 (2005-08-01), Salmon
patent: 2006/0046350 (2006-03-01), Jiang et al.
patent: 2006/0199353 (2006-09-01), Kub et al.

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