Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-25
2008-07-01
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S455000, C438S459000
Reexamination Certificate
active
07393774
ABSTRACT:
A method of fabricating microconnectors. A wafer is provided, and a dielectric layer is formed on a first surface of the wafer. The dielectric layer is bonded to a support wafer, and a thinning process is performed. A second surface of the wafer is then bonded to the support wafer, and a conductive wiring pattern is formed on the dielectric layer. An insulating layer is formed on the dielectric layer and the conductive wiring pattern. A portion of the insulating layer is removed to expose the conductive wiring pattern, and a portion of the dielectric layer and the wafer is removed to divide the wafer into a plurality of microconnectors.
REFERENCES:
patent: 6927471 (2005-08-01), Salmon
patent: 2006/0046350 (2006-03-01), Jiang et al.
patent: 2006/0199353 (2006-09-01), Kub et al.
Hsu Winston
Nguyen Tuan H
Touch Micro-System Technology Inc.
LandOfFree
Method of fabricating microconnectors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating microconnectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating microconnectors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3972076