Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-01-09
2008-11-25
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21273
Reexamination Certificate
active
07456112
ABSTRACT:
A method of fabricating a micro-needle array is provided. The method of fabricating a micro-needle array having a substrate having a first surface and a second surface spaced in a predetermined interval apart from the first surface, includes patterning on the first surface, thereby forming a shape of micro-needle bodies. Further, micro-passageways are formed that penetrate the first surface of the substrate from the second surface by a porous silicon process, and integrates the micro-passageways, thereby forming the bodies and channels of micro-needles.
REFERENCES:
patent: 6503231 (2003-01-01), Prausnitz et al.
patent: 2005/0011858 (2005-01-01), Kuo et al.
patent: 2006/0015061 (2006-01-01), Kuo et al.
Malsawma Lex
Samsung Electronics Co,. Ltd.
Sughrue & Mion, PLLC
LandOfFree
Method of fabricating micro-needle array does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating micro-needle array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating micro-needle array will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4023731