Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2005-02-22
2005-02-22
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S072000
Reexamination Certificate
active
06858459
ABSTRACT:
Method of fabricating a micro-mirror switching device in single crystal silicon are described. The device is fabricated as three main elements: silicon mirror plate with metal-mirror, secondary actuator, and hinge/spring mechanism to integrate the mirror plate with the actuator. p-n junction is first formed on p-type silicon. Trenches are then etched in n-silicon to define the device element boundaries and filled with silicon dioxide. Three layers of sacrificial oxide and two structural poly-silicon layers are deposited and patterned to form device elements. Novel release processes, consisting of backside electrochemical etching in potassium-hydroxide, reactive ion etching to expose oxide-filled trenches from the bottom, and hydrofluoric acid etching of sacrificial oxide layers and oxide in silicon trenches, form the silicon blocks; those that are not attached to structural poly-silicon are sacrificed and those that are attached are left in place to hold together the switching device elements.
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Nagarajan Ranganathan
Singh Janak
Sridhar Uppili
Zou Quanbo
Ackerman Stephen B.
Institute of Microelectronics
Saile George O.
Weiss Howard
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