Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2010-10-18
2011-12-06
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S053000, C438S259000, C438S270000, C257S416000, C257S419000, C257SE29324, C257SE29167, C257SE21002, C257SE21548, C257SE21585
Reexamination Certificate
active
08071412
ABSTRACT:
A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate has a dielectric layer thereon. Next, at least one metal interconnect layer is formed on the dielectric layer in the logic region, and at least one micro-machined metal mesh is simultaneously formed in the dielectric layer of the MEMS region. Therefore, the thickness of the MEMS microphone structure can be effectively reduced.
REFERENCES:
patent: 6943448 (2005-09-01), Gabriel
patent: 7081647 (2006-07-01), Mushika
patent: 7202101 (2007-04-01), Gabriel
patent: 2003/0210799 (2003-11-01), Gabriel
patent: 2009/0243004 (2009-10-01), Lan et al.
Abdelaziez Yasser
Garber Charles
Hsu Winston
Margo Scott
United Microelectronics Corp.
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