Method of fabricating metallized chip carries from wafer-shaped

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430314, 430318, G03F 700

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053588266

ABSTRACT:
A method for simultaneously manufacturing metallized carriers from wafer-shaped substrates is described, wherein such wafer-shaped substrates permit the use of standard IC fabrication apparatus and methods. As a result, very thin and finely dimensioned traces can be deposited. Thin-film manufacturing techniques are used to create the high-density traces on the surface of the chip carriers, thereby permitting direct connections from the IC to the periphery of the carrier without the need for vias. A lid hermetically seals and protects the package. The traces are comprised of a plurality of metals to facilitate bonding, each of the metals homogeneous for a portion of the trace. One metal portion of the trace is of a type compatible with an IC chip placed in the carrier. Another metal portion of the trace is of a type compatible with a trace on a printed circuit board. A metal barrier is interposed between the metals to prevent metal diffusion from one metal to an adjoining portion of another metal.

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Exhibit A is a brochure by Kyocera describing their advanced packaging technologies for high speed/high integration circuits.
Exhibit B is a brochure by Kyocera describing design guidelines.
Exhibit C is a brochure by Kyocera describing new packaging technologies.
Exhibit D is a brochure by Raychem describing their high-density interconnect packaging and product design.

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