Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-01-20
2000-04-11
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438628, 438643, 438644, 438653, 438654, 438660, 438672, H01L 214763, H01L 2144
Patent
active
060487887
ABSTRACT:
A method of forming a metal plug. A contact window is formed to penetrate through a dielectric layer on a substrate having a MOS formed thereon. A titanium glue layer is formed on the dielectric layer and the circumference of the contact window. A titanium barrier layer is formed on the titanium nitride layer. Using nitrogen plasma bombardment on the titanium nitride layer, the structure of the titanium nitride layer is transformed. The number of the nucleation seeds is increased, and the size of grains is reduced. A metal layer is formed on the titanium nitride layer and fills the contact window. A part of the metal layer is removed and a metal plug within the contact window is formed.
REFERENCES:
patent: 5723362 (1998-03-01), Inoue et al.
patent: 5874355 (1999-02-01), Huang et al.
Hsieh Wen-Yi
Huang Hung-Yi
Lin Chi-Rong
Lin Jenn-Tarng
Ghyka Alexander G.
Niebling John F.
United Microelectronics Corp.
LandOfFree
Method of fabricating metal plug does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating metal plug, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating metal plug will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1176197