Method of fabricating MEMS devices on a silicon wafer

Details Method of fabricating MEMS devices on a silicon wafer Method of fabricating MEMS devices on a silicon wafer

2006-01-03

2006-01-03

Smith, Zandra V (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S050000, C438S106000, C438S110000, C438S113000, C438S458000, C438S459000, C438S460000, C438S464000, C438S977000

Reexamination Certificate

active

06982184

ABSTRACT:
A method of fabricating MEMS devices is provided. The method includes the steps of (a) providing a silicon wafer having a MEMS layer arranged on a MEMS side of the wafer; (b) applying a first holding means to the MEMS side of the wafer; (c) performing at least one operation on the wafer from a back side of the wafer opposed to the MEMS side; (d) applying a second holding means to said back side of the wafer; (e) removing the first holding means; (f) performing at least one deep silicon etch on the MEMS side of the wafer to define individual MEMS chips, each chip being composed of a part of the wafer and at least one part of the MEMS layer; and (g) causing the individual chips to be released from the second holding means.

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