Method of fabricating low dielectric constant dielectric films

Details Method of fabricating low dielectric constant dielectric films Method of fabricating low dielectric constant dielectric films

2006-02-07

2006-02-07

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S040000, C257S520000

Reexamination Certificate

active

06995439

ABSTRACT:
Porous dielectric layers are produced by introducing small vertical or columnar gaps in pre-formed layers of dense dielectric. The pores may be formed by a special process that is different from the processes employed to form metal lines and other features on a VLSI device. Further, the columnar gaps may be produced after the planarization process for a particular layer has been completed. Then, after the pores are formed, they are capped by depositing another layer of material. In this manner, the newly porous layer is protected from direct exposure to the pressure of subsequent planarization processes. In alternative embodiments, the processes described herein are applied to introduce pores into a pre-formed layer of semiconductor to produce a porous semiconductor layer.

REFERENCES:
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5920790 (1999-07-01), Wetzel et al.
patent: 6177329 (2001-01-01), Pang
patent: 6268276 (2001-07-01), Chan et al.
patent: 6329062 (2001-12-01), Gaynor
patent: 6753250 (2004-06-01), Hill et al.
patent: 2003/0119307 (2003-06-01), Bekiaris et al.
patent: WO95/07543 (1995-03-01), None
R.D. Miller et al., “Phase-Separated Inorganic-Organic Hybrids for Microelectronic Applications,” MRS Bulletin, Oct. 1997, pp. 44-48.
Jin et al., “Nanoporous Silica as an Ultralow-k Dielectric,” MRS Bulletin, Oct. 1997, pp. 39-42.
Cleemput et al., “Dielectric Films With Low Dielectric Constants,” U.S. Appl. No. 09/727,796, filed Nov. 30, 2000.
Asoh et al., “Babrication of Ideally Ordered Anodic Porous Alumina with 63 nm Hole Periodocity Using Sulfuric Acid,” J. Vac. Sci. Technol. B 19(2), Mar./Apr. 2001, pp. 569-572.
Asoh et al., “Conditions for Fabrication of Ideally Ordered Anodic Porous Alumina Using Pretextured AI,” Journal of the Electrochemica Society, 148 (4) B152-B156 (2001) pp. B152-B156.
Holland et al., “Nonlithographic Technique for the Production of Large Area High Density Gridded Field Sources,” J. Vac. Sci. Technol. B 17(2), Mar./Apr. 1999, pp. 580-582.
Masuda et al. “Highly Ordered Nanochannel-Array Architecture in Anodic Alumina,” App. Phys. Lett. 71(19), Nov. 1997, pp. 2770-2772.
Clube et al., White Paper from Holotronic Technologies SA; downloaded from www.hdotronic.com/whitepaper/fine-patt.pdf on Mar. 12, 2002.
Meli et al., “Self-Assembled Masks for the Transfer of Nanometer-Scale Patterns into Surfaces: Characterization by AFM and LFM”, Nano Letters, vol. 2, No. 2, 2002, 131-135.
“Shipley Claims Porous Low K Dielectric Breakthrough,” Press Release Mar. 17, 2003.

Affiliated with

Also associated with

Rating

Method of fabricating low dielectric constant dielectric films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating low dielectric constant dielectric films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating low dielectric constant dielectric films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3696509