Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-03-08
2000-12-12
Zarabian, Amir
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438624, 438631, 438666, H01L 214763
Patent
active
061598410
ABSTRACT:
To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passivation layer over the bus and plating a thick metal layer, preferably nickel, in the channel. The metal strap layer dramatically reduces the resistance of the bus.
REFERENCES:
patent: 3667008 (1972-05-01), Katnack
patent: 4268849 (1981-05-01), Gray et al.
patent: 4767722 (1988-08-01), Blanchard
patent: 4864370 (1989-09-01), Gaw et al.
patent: 4984061 (1991-01-01), Matsumoto
patent: 5023692 (1991-06-01), Wodarczyk et al.
patent: 5192989 (1993-03-01), Matsushita et al.
patent: 5270253 (1993-12-01), Arai et al.
patent: 5272111 (1993-12-01), Kosaki
patent: 5310699 (1994-05-01), Chikawa et al.
patent: 5315156 (1994-05-01), Lott
patent: 5321302 (1994-06-01), Shimawaki
patent: 5355008 (1994-10-01), Moyer et al.
patent: 5359220 (1994-10-01), Larson et al.
patent: 5381046 (1995-01-01), Cederbaum et al.
patent: 5405794 (1995-04-01), Kim
patent: 5412239 (1995-05-01), Williams
patent: 5468984 (1995-11-01), Efland et al.
patent: 5473193 (1995-12-01), Temple et al.
patent: 5508229 (1996-04-01), Baker
patent: 5616519 (1997-04-01), Ping
patent: 5639692 (1997-06-01), Teong
patent: 5674781 (1997-10-01), Huang et al.
patent: 5763954 (1998-06-01), Hyakutake
patent: 5773892 (1998-06-01), Morikawa et al.
patent: 5801093 (1998-09-01), Lin
patent: 5891797 (1999-04-01), Farrar
patent: 5945709 (1999-08-01), Williams et al.
patent: 5949144 (1999-09-01), Delgado et al.
patent: 5953635 (1999-09-01), Andideh
patent: 5970375 (1999-10-01), Gardner et al.
patent: 5985746 (1999-11-01), Kapoor
patent: 6060386 (2000-05-01), Givens
Kasem Mohammad
Williams Richard K.
Lebentritt Michael S.
Siliconix incorporated
Steuber David E.
Zarabian Amir
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