Method of fabricating interconnect

Details Method of fabricating interconnect Method of fabricating interconnect

2005-08-03

2008-03-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S626000, C438S631000, C438S633000, C257S021000

Reexamination Certificate

active

07348272

ABSTRACT:
A method of fabricating interconnect is described. A first dielectric layer having an opening is formed over a substrate. A metal layer is filled into the opening. A material layer is formed over the first dielectric layer and the metal layer. A surface treatment process is performed to the material layer so as to form a cap layer on the surface of the metal layer. The material layer and a portion of the first dielectric layer are removed. A second dielectric layer is formed over the substrate, and the surface of the second dielectric layer is higher than that of the cap layer. A planarization process is performed at least to remove a portion of the second dielectric layer and a portion of the cap layer so as to expose the top of the opening.

REFERENCES:
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Article titled “Successful Dual Damascene Integration of Extreme Low k Materials(k<2.0)Using a Novel Gap Fill Based Integration Scheme” jointly authored by S. Nitta et al., IEEE Electron Device Letters, pp. 321-324.

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