Method of fabricating integrated circuit interconnection employi

Details Method of fabricating integrated circuit interconnection employi Method of fabricating integrated circuit interconnection employi

1996-10-04

1998-11-24

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438629, 438633, 438637, H01L 2128

Patent

active

058406255

ABSTRACT:
An improved integrated circuit interconnection for interconnecting at least two conductive regions within an integrated circuit, and method for producing the same. The interconnection includes a tungsten layer and a barrier layer to provide a low contact resistance within the interconnection and between the conductive regions and the interconnection. The interconnection also includes an aluminum layer for providing a low sheet resistance in the current path between the two conductive regions. Thus the invention combines the advantages of an all tungsten interconnection with those of a tungsten capsuled aluminum interconnection.

REFERENCES:
B. Vollmer et al, "Recent advances in the application of collimated sputtering", Thin Solid Films, vol. 247, No. 1, pp. 104-111, Jul. 1994.

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