Method of fabricating image sensor having reduced dark current

Details Method of fabricating image sensor having reduced dark current Method of fabricating image sensor having reduced dark current

2011-06-07

2011-06-07

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000, C257SE31054

Reexamination Certificate

active

07955888

ABSTRACT:
An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.

REFERENCES:
patent: 7285482 (2007-10-01), Ochi
patent: 7566925 (2009-07-01), Song et al.
patent: 7662658 (2010-02-01), Mouli et al.
patent: 2006/0243981 (2006-11-01), Rhodes
Korean Patent Application No. 1020050087685 to Kim et al., having Publication date of Mar. 26, 2007 (w/ English Abstract page).
Japanese Patent Application No. 2002-326362 to Masanori et al., having Publication date of Jun. 10, 2004 (w/ English Abstract page).
Japanese Patent Application No. 2004-215068 to Hironori, having Publication date of Feb. 9, 2006 (w/ English Abstract page).

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