Method of fabricating image sensor having inner lens

Details Method of fabricating image sensor having inner lens Method of fabricating image sensor having inner lens

2011-01-25

2011-01-25

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C257S294000, C257SE33068

Reexamination Certificate

active

07875488

ABSTRACT:
A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.

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