Method of fabricating highly sensitive photo sensor and structur

Details Method of fabricating highly sensitive photo sensor and structur Method of fabricating highly sensitive photo sensor and structur

1998-01-29

1999-07-06

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257458, H01L 2904

Patent

active

059200910

ABSTRACT:
An improved structure of a photo sensor is disclosed. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avoid the shortcoming of conventional PIN photo diode, and enhance the sensitivity of photo sensing.

REFERENCES:
patent: 5557114 (1996-09-01), Leas et al.
patent: 5610409 (1997-03-01), Leas et al.

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