Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Patent
1996-05-13
1999-07-27
Chaudhuri, Olik
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
438 31, 438184, 257197, 257198, 257474, 257477, 257478, H01L 21331, H01L 2100, H01L 21338, H01L 310328
Patent
active
059306360
ABSTRACT:
A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a GaAs substrate, with a subcollector layer and a collector layer. A suitable dielectric material is deposited on top of the collector layer. Vias are formed in the collector layer and subcollector layer for the barrier and ohmic contacts. The collector via is relatively deeply etched into the collector layer to lower the series resistance between the barrier and ohmic contacts, which results in relatively higher cut-off frequency performance.
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Oki Aaron K.
Streit Dwight C.
Tran Liem T.
Umemoto Donald K.
Chambliss Alonzo
Chaudhuri Olik
TRW Inc.
Yatsko Michael S.
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