Method of fabricating high density integrated circuits, containi

Details Method of fabricating high density integrated circuits, containi Method of fabricating high density integrated circuits, containi

1996-07-17

1998-01-06

Ledynh, Bot L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

257296, 257300, 257306, 438142, 438197, 438238, 438239, 438253, H01G 406, H01L 27108

Patent

active

057061645

ABSTRACT:
A process for fabricating stacked capacitor structure, DRAM devices, has been developed, in which the surface area of the stacked capacitor structure has been increased as a result of the topography created via the use of underlying insulator filled, shallow trenches, insulator protected polycide gate structures, and insulator protected bit line contact structures.

REFERENCES:
patent: 5356828 (1994-10-01), Swan et al.
patent: 5383088 (1995-01-01), Chapple-Sokol et al.
patent: 5447884 (1995-09-01), Fahey et al.

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