Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-12-08
2011-10-11
Smith, Matthew (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S706000, C438S712000, C438S719000, C438S723000, C438S761000
Reexamination Certificate
active
08034719
ABSTRACT:
To fabricate high aspect ratio metal structures, a two-layer structure is provided on a conductive layer. The two-layer structure includes a first layer adjacent the conductive layer and a second layer adjacent the first layer where the second layer is etchable by a Deep Reactive Ion Etching (DRIE) process. Using the DRIE process, at least one selected region of the second layer is completely etched away with the selected region being at least partially aligned with a region of the conductive layer such that the first layer is then exposed thereover. The first layer so-exposed is then removed to expose the region of the conductive layer thereunder. Metal is electroplated onto the exposed conductive layer and any remaining portions of the two-layer structure are then removed.
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Deeds Michael
Jean Daniel L.
Keeney Allen
Garcia Joannie A
Smith Matthew
The United States of America as represented by the Secretary of
Zimmerman Fredric J.
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