Method of fabricating heteroepitaxial microstructures

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C439S047000, C439S191000, C439S311000, C257SE21085, C257SE21092, C257SE21097, C257SE21102, C257SE21108, C257SE21082, C257SE21115, C257SE21117

Reexamination Certificate

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11165895

ABSTRACT:
An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.

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