Method of fabricating group III nitride semiconductor single...

Details Method of fabricating group III nitride semiconductor single... Method of fabricating group III nitride semiconductor single...

2011-03-15

2011-03-15

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21090

Reexamination Certificate

active

07906412

ABSTRACT:
A method of fabricating a group III nitride semiconductor single crystal includes preparing a seed substrate which includes group III nitride semiconductor and has a crystal growth face of single index plane, and epitaxially growing the group III nitride semiconductor single crystal on the crystal growth face, wherein the group III nitride semiconductor single crystal is epitaxially grown while being surrounded by a plurality of crystal surfaces including low-index planes spontaneously formed, and the low-index planes have a structure that each of plane indices showing a crystal plane is not more than 3.

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patent: 2007-314357 (2007-12-01), None
S. Kubo et al. (2008) “Bulk GaN crystals grown by HVPE”, 2nd International Symposium on Growth of III-Nitrides, Presentation No. I-TU-5.

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