Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-01-26
1991-04-16
Chaudhuri, Olik
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566161, 1566162, 1566163, 1566164, 15662076, 156DIG70, 252 6236A, C30B 1106
Patent
active
050079794
ABSTRACT:
A method of fabricating an undoped or impurity-doped semi-insulating GaAs single crystal with the use of a silica boat comprises the steps of making a melt of GaAs in the silica boat except for a seed crystal, doping the melt with oxygen, maintaining the doped melt as it is for a predetermined period of time, solidifying the melt from the side opposite the seed crystal toward the seed crystal, seeding the melt when the melt attains a predetermined melt zone width on the seed crystal side, and moving the melt zone in the direction opposite the seed crystal for its solidification while keeping the melt zone width unchanged.
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Willardson et al., "Semiconductors and Semimetals, vol. 20, Semi-Insulating GaAs", Academic Press, Inc., New York, 1984, pp. 24-25.
Aoyama Seigi
Hattori Akio
Kurihara Tooru
Mizuniwa Seiji
Nakamura Konichi
Chaudhuri Olik
Gossett Dykema
Hitachi Cable Limited
Kunemund Robert M.
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