Method of fabricating field effect thin film transistor

Details Method of fabricating field effect thin film transistor Method of fabricating field effect thin film transistor

1996-09-24

1998-11-10

Picardat, Kevin

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438162, 438166, 438486, 438798, H01L 2184

Patent

active

058343458

ABSTRACT:
A method of fabricating a field effect thin film transistor is provided, in which, after a first amorphous semiconductor layer having a predetermined thickness is deposited on a gate insulating film, the first amorphous semiconductor layer is transformed to a micro-crystal semiconductor layer by exposing it to hydrogen plasma produced by hydrogen discharge and, then, a second amorphous semiconductor layer is deposited on the micro-crystal semiconductor layer. According to this method, it is possible to fabricate a high performance and high quality field effect thin film transistor through a simplified step of forming the micro-crystal semiconductor which becomes a channel region thereof.

REFERENCES:
patent: 5242530 (1993-09-01), Batey et al.
patent: 5288658 (1994-02-01), Ishihara
patent: 5517037 (1996-05-01), Yamamoto
patent: 5624873 (1997-04-01), Fonash et al.
K.-C. Hsu et al., J. Appl. Phys., 73(10)(May 1993)4841 "Evolution of microstructures in hydrogenated silicon films prepared by . . . H atom treatment".
S.S. He et al., MRS Symp. Proc., 345(1994)53 "A low temperature plasma assisted deposition process for microcrystalline TFTs".

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