Method of fabricating ferroelectric integrated circuit using oxy

Details Method of fabricating ferroelectric integrated circuit using oxy Method of fabricating ferroelectric integrated circuit using oxy

1998-04-17

2000-12-26

Bowers, Charles

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438210, 438240, 438781, 257 43, 257295, 257310, H01L 2100

Patent

active

061658022

ABSTRACT:
An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. An oxygen-recovery anneal is conducted in ambient oxygen at a temperature range from 300.degree. to 1000.degree. C. for a time period from 20 minutes to 2 hours. The oxygen-recovery anneal reverses the effects of hydrogen degradation and restores ferroelectric properties. The oxygen-recovery anneal is more effective as the annealing temperature and annealing time increase. Preferably the metal oxide element comprises a layered superlattice compound. Hydrogen degradation of the ferroelectric properties is minimized when the layered superlattice compound comprises strontium bismuth tantalum niobate and the niobium/tantalum mole ratio in the precursor is about 0.4. Hydrogen degradation is further minimized when at least one of the superlattice generator-element and the B-site element of the layered superlattice compound is present in excess of the amounts represented by the balanced stoichiometric formula of the compound.

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