Method of fabricating dual damascene structure

Details Method of fabricating dual damascene structure Method of fabricating dual damascene structure

2010-10-04

2011-10-11

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S653000, C438S424000, C438S436000

Reexamination Certificate

active

08034712

ABSTRACT:
A method of fabricating a dual damascene structure is described. A dielectric layer and a metal hard mask layer are sequentially formed on a substrate having thereon a conductive layer and a liner layer. The metal hard mask layer and the dielectric layer are patterned to form a via hole exposing a portion of the liner layer. A gap-filling layer is filled in the via hole, having a height of ¼ to ½ of the depth of the via hole. A trench is formed in the metal hard mask layer and the dielectric layer. The gap-filling layer is removed to expose the portion of the liner layer, which is then removed. A metal layer is formed filling in the via hole and the trench, and then the metal hard mask layer is removed.

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Chinese Examination Report of Taiwan Application No. 096116278, dated May 30, 2011.

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