Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-01-01
2008-01-01
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S156000, C438S157000, C257SE27112
Reexamination Certificate
active
10603929
ABSTRACT:
A contact line structure for a liquid crystal display device includes a metal line on an array substrate, a silicide layer on the metal line, an insulating layer having a contact hole exposing a first portion of the silicide layer, and a transparent conducting terminal in and on the contact hole, wherein the insulating layer is adjacent to the contact hole.
REFERENCES:
patent: 5978058 (1999-11-01), Sung
patent: 6268289 (2001-07-01), Chowdhury et al.
patent: 6714266 (2004-03-01), Ueda et al.
patent: 2002/0004108 (2002-01-01), Iwakabe et al.
Lee Dong Hoon
Park Kwon Shik
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
Nguyen Thanh
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