Method of fabricating conductive non-metallic self-passivating n

Details Method of fabricating conductive non-metallic self-passivating n Method of fabricating conductive non-metallic self-passivating n

1986-07-21

1988-08-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437193, 437200, 437220, 148DIG125, 357 67, 357 71, 357 69, H01L 2166

Patent

active

047613866

ABSTRACT:
A monolithic silicon integrated circuit chip is provided with a conductive passivating coating over the metal bonding pads. The coating is composed of doped polysilicon or metal silicide. Such materials provide a self-passivating, non-corrodable surface capable of forming a conventional eutectic bond to a connecting wire. A moat is etched through this layer outside the confines of the bonding pad so that they can be electrically isolated. Eutectic wire bonds are then made to the coating where they would ordinarily be made to the pad metal. Since the passivating coating fully covers the bonding pad a substantial increase in passivation occurs. If desired the passivating coating can be overcoated with a thin metal layer to facilitate probing of the circuits in wafer form.

REFERENCES:
patent: 3806361 (1974-04-01), Lehner
patent: 4106051 (1978-08-01), Dormer et al.
patent: 4109275 (1978-08-01), Sarkary
patent: 4149301 (1979-04-01), Cook
patent: 4628590 (1986-12-01), Udo et al.

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