Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-11
2007-12-11
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S595000, C438S597000, C438S197000, C438S619000, C438S672000, C438S643000, C438S648000, C257SE21591, C257SE21166
Reexamination Certificate
active
11236961
ABSTRACT:
A method of forming a conductive line suitable for decreasing a sheet resistance of the conductive lines. The method comprises steps of providing a material layer having a conductive layer formed thereon and forming a patterned mask layer on the conductive layer. In addition, a portion of the conductive layer is removed by using the patterned mask layer as a mask and a spacer is formed on a sidewall of the patterned mask layer and the conductive layer. A portion of the conductive layer is removed until the material layer is exposed to form a conductive line, wherein the spacer and the patterned mask layer serve as a mask.
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Chang Jui-Pin
Chen Ying-Tso
Huang Shou-Wei
Liu Chien-Hung
Ahmadi Mohsen
J.C. Patents
Lebentritt Michael
Macronix International Co. Ltd.
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