Method of fabricating and mounting flip chips

Details Method of fabricating and mounting flip chips Method of fabricating and mounting flip chips

2005-02-01

2005-02-01

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S110000, C438S115000, C438S120000, C438S127000

Reexamination Certificate

active

06849477

ABSTRACT:
A method of fabricating and mounting a flip chip includes using an environmentally friendly plasma gas, which minimizes safety hazards during an implementation of the method and does not require an additional heat source during a reflow process thereof. That is, the method includes reflowing a solder bump using an argon-hydrogen plasma process. The argon-hydrogen plasma process used to fabricate the flip chip includes maintaining a pressure in a chamber at 250 to 270 mtorr, feeding a mixed gas of argon with 10 to 20% hydrogen to the chamber to generate a plasma with power of 100 to 200 W, and exposing the flip chip to the plasma for 30 to 120 seconds. Additionally, an argon-hydrogen plasma process used to mount the flip chip includes maintaining pressure in a chamber at 100 to 400 mtorr, feeding a mixed gas of argon with 0 to 20% hydrogen to the chamber to generate a plasma with power of 10 to 50 W, and exposing the flip chip to the plasma for 10 to 120 seconds.

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Korean Patent Abstract, Publication No. 2000-778, Published Jan. 15, 2000, Choi et al. (Abstract Only).

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