Method of fabricating an unlanded via

Details Method of fabricating an unlanded via Method of fabricating an unlanded via

1999-07-22

2000-09-26

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438634, 438636, 438637, H01L 214763

Patent

active

061242004

ABSTRACT:
A method of fabricating an unlanded via. A substrate has a metal layer formed thereon and an ARC layer is formed on the metal layer. A liner dielectric layer is formed on the ARC layer and the sidewall of the metal layer, and an insulating material layer is formed on the insulating dielectric layer. The insulating material layer is then etched back, so a surface of the insulating material layer lower than the ARC layer surface is formed. Thereafter, a protective layer is formed on the insulating material layer and the metal layer, in which the protective layer is different from the liner dielectric layer. An IMD layer is formed on the protective layer. Using the liner dielectric layer as an etching stop layer, the IMD layer and the protective layer are patterned, and then the liner dielectric layer on the metal layer is removed, such that an unlanded via opening is formed.

REFERENCES:
patent: 5451543 (1995-09-01), Woo et al.
patent: 5470793 (1995-11-01), Kalnitsky
patent: 5482900 (1996-01-01), Yang
patent: 5702981 (1997-12-01), Maniar et al.
patent: 5708303 (1998-01-01), Jeng
patent: 5792705 (1998-08-01), Wang et al.
patent: 5858870 (1999-01-01), Zheng et al.
patent: 5858875 (1999-01-01), Chung et al.
patent: 5935868 (1999-08-01), Fang et al.
patent: 5960316 (1999-09-01), Bai

Affiliated with

Also associated with

Rating

Method of fabricating an unlanded via does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating an unlanded via, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an unlanded via will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2099753