Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2008-11-05
2010-12-21
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S113000, C438S460000, C257S416000, C029S594000
Reexamination Certificate
active
07855095
ABSTRACT:
In the present invention, a semiconductor substrate wherein a plurality of MEMS microphones is formed is disposed opposed to a discharge electrode in a state of being stuck on a sheet. Electretization of a dielectric film provided in the MEMS microphone is performed by irradiating the dielectric film between a fixed electrode and a vibration film provided in the MEMS microphone with ions resulting from a corona discharge of the discharge electrode in a state that a predetermined potential difference is applied to the fixed electrode and the vibration film and fixing charges based on the ions to the dielectric film. The electretization is successively performed to each MEMS microphone on the semiconductor substrate by relatively moving the semiconductor substrate and the discharge electrode. Therefore, electretization of the dielectric film in the MEMS microphone chip is realized using a low-cost and simple fabricating equipment and productivity can be enhanced.
REFERENCES:
patent: 7080442 (2006-07-01), Kawamura et al.
patent: 2007/0258605 (2007-11-01), Tsuchiya
patent: 2007/0274544 (2007-11-01), Takeuchi et al.
patent: 1843631 (2007-10-01), None
patent: 2007-294858 (2007-11-01), None
patent: WO 2006132193 (2006-12-01), None
Doi Kazumoto
Imai Tadao
Iwaseki Hiroaki
Miyashita Yoshiyuki
Choi Calvin
McDermott Will & Emery LLP
Mulpuri Savitri
Panasonic Corporation
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