Method of fabricating an interconnect structure having...

Details Method of fabricating an interconnect structure having... Method of fabricating an interconnect structure having...

2007-02-06

2007-02-06

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S687000

Reexamination Certificate

active

10709982

ABSTRACT:
A copper damascene process is provided. A semiconductor substrate having a base dielectric layer thereon is prepared. A first damascened copper interconnect structure is formed in the base dielectric layer. The first damascened copper interconnect structure is capped with a dielectric barrier; Subsequently, multiple chemical vapor deposition (CVD) cycles within a CVD reactor is carried out to deposit a low-k dielectric film stack on the first dielectric barrier until thickness of the low-k dielectric film stack reaches a desired value, wherein each of the CVD cycles comprises: (1) chemical vapor depositing a low-k dielectric film having a pre-selected thickness; and (2) cooling down the low-k dielectric film within the CVD reactor. A second damascened copper interconnect structure is formed in the low-k dielectric film stack.

REFERENCES:
patent: 2002/0145200 (2002-10-01), Dalton et al.
patent: 2004/0097075 (2004-05-01), Bradshaw et al.

Affiliated with

Also associated with

Rating

Method of fabricating an interconnect structure having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating an interconnect structure having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an interconnect structure having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3882466