Method of fabricating an integrated silicon-germanium...

Details Method of fabricating an integrated silicon-germanium... Method of fabricating an integrated silicon-germanium...

2006-10-10

2006-10-10

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S359000, C438S318000, C438S320000, C438S357000, C438S341000, C438S366000, C257SE21371, C257SE21335, C257SE21703

Reexamination Certificate

active

07118981

ABSTRACT:
In a method of fabricating an integrated silicon-germanium heterobipolar transistor a silicon dioxide layer arranged between a silicon-germanium base layer and a silicon emitter layer is formed by means of Rapid Thermal Processing (RTP) to ensure enhanced component properties of the integrated silicon-germanium heterobipolar transistor.

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