Method of fabricating an integrated pressure sensor

Details Method of fabricating an integrated pressure sensor Method of fabricating an integrated pressure sensor

1993-06-07

1995-06-06

Hearn, Brian E.

Etching a substrate: processes

Etching of semiconductor material to produce an article...

437 7, 437226, 148DIG28, H01L 21306

Patent

active

054219566

ABSTRACT:
A method of fabricating an integrated pressure sensor, which is capable of decreasing adverse effects caused by the distortion occurring at the time when a silicon wafer and a seat are joined together. On a silicon wafer 1 are formed a thin diaphragm 2 for each of the chips, a piezo-resitance layer for each of the chips, and a signal processing circuit with an adjusting resistor for each of the chips. The silicon wafer 1 is joined onto a glass seat 6 that has pressure-adjusting passges 7 formed therein to adjust the pressure exerted on the diaphragms 2 of the silicon wafer 1. Half-dicing is effected that reaches a predetermined depth of the glass seat 6 penetrating through the silicon wafer 1 for each of the chips, and resistance of the adjusting resistor is adjusted for each of the chips while adjusting the pressure applied to the diaphragms 2 via pressure-adjusting passages 7 in the seat in a step of adjusting the pressure sensitivity by trimming the wafer and by applying a negative pressure. Finally, the silicon wafer 1 and the glass seat 6 are cut by full-dicing for each of the chips.

REFERENCES:
patent: 4675643 (1987-06-01), Tanner et al.
patent: 4800758 (1989-01-01), Knecht et al.
patent: 4802952 (1989-02-01), Kobori et al.
patent: 4881056 (1989-11-01), Mizukoshi et al.

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