Metal treatment – Compositions – Heat treating
Patent
1982-03-31
1984-06-26
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 148187, 357 34, 357 91, H01L 744, H01L 21265
Patent
active
044564880
ABSTRACT:
A method is disclosed for fabricating a monolithic integrated planar transistor whose emitter region (1) is diffused into the base region (3) on one surface side of a semiconductor wafer (2), which base region is diffused into the collector region (4). To achieve particularly small transistor structures with high cutoff frequencies, after the diffusion of the collector region (4), the impurities of the base region (3) and those of the emitter region (1) are introduced into the surface of the collector region (4) by masked ion implantation, and the implanted ions are then activated in a single tempering process, during which the base region (3) and the emitter region (1) are formed below a protective insulating layer (5) which remains on the semiconductor surface. In the protective insulating layer, windows are formed for depositing the contacts (6, 7, 8) of the collector region (4), the base region (3), and the emitter region (1).
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Briska et al., IBM-TDB, 23 (1980), 644.
IT&T Industries, Inc.
Lenkszus Donald J.
Raden James B.
Roy Upendra
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