Method of fabricating an integrated circuit

Details Method of fabricating an integrated circuit Method of fabricating an integrated circuit

2005-12-29

2009-11-24

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C257SE21120, C257SE21454, C257SE21691, C438S266000

Reexamination Certificate

active

07622374

ABSTRACT:
Methods of fabricating an integrated circuit, in particular a dynamic random access memory are described. After forming memory cells on a semiconductor substrate a mirror layer is provided, said mirror layer covering the memory cells. Then logic devices are formed adjoining to said memory cells covered by said mirror layer, said forming of said logic devices including activating the dopants in dopant regions by means of a radiation annealing, said radiation being reflected by said mirror layer. After at least partly removing the mirror layer; a wiring of the memory cells and of the logic devices is formed.

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