Method of fabricating an epitaxially grown layer

Details Method of fabricating an epitaxially grown layer Method of fabricating an epitaxially grown layer

2005-11-22

2009-10-13

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S095000, C117S089000, C117S054000, C117S103000, C117S104000, C438S459000, C438S528000, C438S928000, C438S977000, C438S503000, C438S497000

Reexamination Certificate

active

07601217

ABSTRACT:
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown on the nucleation portion. The remainder portion is separated or otherwise removed from the support portion.

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