Semiconductor device manufacturing: process – With measuring or testing
Patent
1997-02-26
1998-04-28
Wilczewski, Mary
Semiconductor device manufacturing: process
With measuring or testing
438478, 438507, 438974, 117904, 117 13, 117 14, 117 43, 117 49, H01L 2166, G01N 2188
Patent
active
057443807
ABSTRACT:
There is provided a high quality epitaxial water on which the density of microscopic defects in the epitaxial layer is reduced to keep the GOI thereof sufficiently high and to reduce a leakage current at the P-N junction thereof when devices are incorporated, to thereby improve the yield of such devices. In an epitaxial wafer obtained by forming an epitaxial layer on a substrate, the density of IR laser scatterers is 5.times.10.sup.5 pieces/cm.sup.3 or less throughout the epitaxial layer.
REFERENCES:
patent: 4391524 (1983-07-01), Steigmeier et al.
patent: 4401506 (1983-08-01), Otsuka
patent: 4402613 (1983-09-01), Daly et al.
patent: 4509990 (1985-04-01), Vasudev
patent: 4598997 (1986-07-01), Steigmeier et al.
patent: 4722764 (1988-02-01), Herzer et al.
patent: 4863877 (1989-09-01), Fan et al.
patent: 4876218 (1989-10-01), Pessa et al.
patent: 4927471 (1990-05-01), Okuda
patent: 4945254 (1990-07-01), Robbins
patent: 5091333 (1992-02-01), Fan et al.
patent: 5141894 (1992-08-01), Bisaro et al.
patent: 5156995 (1992-10-01), Fitzgerald, Jr. et al.
patent: 5202284 (1993-04-01), Kamins et al.
patent: 5221367 (1993-06-01), Chisholm et al.
patent: 5252173 (1993-10-01), Inoue
patent: 5296047 (1994-03-01), Fellner
patent: 5373804 (1994-12-01), Tachimori et al.
patent: 5506672 (1996-04-01), Moslehi
patent: 5508800 (1996-04-01), Miyashita et al.
Taijing et al., Detection and Characterization of Microdefects and Microprecipitates in Si Wafers by Brewster Angle Illumination Using an Optical Fiber system, Journal of Crystal Growth, vol. 114, 1991, pp. 64-70.
Fillard et al., Submicron Optical Sectioning Microscopy: A Particular Inverse Problem Solution Adapted to Epilayer Defect Analysis, Journal of Crystal Growth, vol. 103, 1990, pp. 120-125.
Shirai, Determination of Oxygen Concentration in Single-Side Polished Czochralski-Grown Silicon Wafers by P-Polarized Brewster Angle Incidence Infrared Spectroscopy, J. Electrochem. Soc., vol. 138, No. 6, Jun. 1991, pp. 1784-1787.
Moriya et al., "Development of Non-Destructive Bulk Micro-Defect Analyzer for Si Wafers", Journal of Crystal Growth, vol. 128, No. 1-4, Mar. 1993, pp. 304-309.
"Si Wafers for Next Generation ULSI" 20th Symposium on ULSI Ultra Clean Technology, pp. 90-101; Tokyo, Japan, Dec. 20-22, 1993.
The American Heritage Dictionary, 2nd College Edition, Boston: Houghton Mifflin Co., 1982, p. 1123.
Defect Control in Semiconductors, Proceedings of the International Conference on the Science and Technology of Defect Control in Semiconductors, The Yokohama 21st Century Forum, Yokohama, Japan, Sep. 17-22, 1989, edited by K. Sumino, pp. 1499-1504.
Non-Intrusive Mapping of Subsurface Defects in Semiconductors, Applied Physics A55, D. Guidotti, et al, pp. 139-143.
Kohno Mitsuo
Motoura Hisami
Nishimura Masashi
Uemura Noriyuki
Komatsu Electronic Metals Co. Ltd.
Wilczewski Mary
LandOfFree
Method of fabricating an epitaxial wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating an epitaxial wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an epitaxial wafer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1531481