Method of fabricating an electrostatic ultrasonic transducer

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

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438 53, 438 48, 216 2, 73777, 7351416, H01L 2100

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active

060048328

ABSTRACT:
A method of fabrication wherein a nitride layer is spaced from a conductive substrate by an insulating layer and etching removes at least portions of an insulating layer to leave a nitride membrane spaced from the substrate. The surface of the conductive layer where the insulating layer is removed is chemically roughened and the etchant is removed by freeze-drying and sublimation to eliminate sticking of the nitride layer to the substrate surface during fabrication.

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