Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-20
2007-02-20
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S099000, C438S159000
Reexamination Certificate
active
11131387
ABSTRACT:
A method of fabricating an electronic device includes the following steps: a) providing a substrate; b) forming a first strip on the substrate; c) coating an insulation layer on the first strip and the substrate while completely overlaying the first strip and the substrate with the same; d) forming a second strip on the insulation layer; e) forming conductive polymer on the insulation layer while completely overlaying the second strip with the same; f) etching the conductive polymer via plasma etching for completely removing the conductive polymer on the second strip; and g) forming a semiconductor layer on the second strip and the conductive polymer.
REFERENCES:
patent: 6913944 (2005-07-01), Hirai
patent: 2004/0129937 (2004-07-01), Hirai
patent: 2004/0132285 (2004-07-01), Andideh et al.
patent: 2005/0029514 (2005-02-01), Moriya
patent: 2005/0156163 (2005-07-01), Hirai
patent: 2005/0194615 (2005-09-01), Huang et al.
Ho Jia-Chong
Hu Tarng-Shiang
Huang Liang-Ying
Lee Cheng-Chung
Barnes Seth
Troxell Law Office PLLC
Wilczewski M.
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