Method of fabricating an electrical fuse for...

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state

Reexamination Certificate

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Details

C438S149000, C438S215000, C438S311000, C438S333000, C438S601000, C257S209000, C257S347000, C257S529000

Reexamination Certificate

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07067359

ABSTRACT:
A method and apparatus for providing an electrical fuse is provided. An electrical fuse is patterned from the active layer of a semiconductor-on-insulator (SOI) wafer. One shape of the electrical fuse may be a first and second portion electrically coupled via a third section. The third section is typically thinner than the first and second portion. An ion implant is performed to fully deplete the electrical fuse, and a silicidation process is performed. Thereafter, standard processing techniques may be used to form vias and other integrated circuit structures.

REFERENCES:
patent: 6100116 (2000-08-01), Lee et al.
patent: 6444544 (2002-09-01), Hu et al.
patent: 6555458 (2003-04-01), Yu
patent: 6753210 (2004-06-01), Jeng et al.
patent: 6911360 (2005-06-01), Li et al.
patent: 6933591 (2005-08-01), Sidhu et al.
patent: 61154024 (1986-07-01), None

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