Method of fabricating an amorphous zinc-oxide based thin...

Details Method of fabricating an amorphous zinc-oxide based thin... Method of fabricating an amorphous zinc-oxide based thin...

2009-11-13

2011-11-15

Mai, Anh (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S043000, C438S163000, C257SE21414

Reexamination Certificate

active

08058116

ABSTRACT:
A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.

REFERENCES:
patent: 2010/0065838 (2010-03-01), Yamazaki et al.
patent: 2010/0065839 (2010-03-01), Yamazaki et al.
patent: 2010/0065840 (2010-03-01), Yamazaki et al.
patent: 2010/0084649 (2010-04-01), Seo et al.
patent: 2010/0155733 (2010-06-01), Moon et al.

Affiliated with

Also associated with

Rating

Method of fabricating an amorphous zinc-oxide based thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating an amorphous zinc-oxide based thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an amorphous zinc-oxide based thin... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4285839