Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-06-14
1997-06-10
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438106, H01L 21283
Patent
active
056375212
ABSTRACT:
A method of using layers of gold metallization and a thick film coating of photo-sensitive material to form an air-filled microwave waveguide structure on the outer surface of a semiconductor body, such as a monolithic microwave integrated circuit commonly referred to as an MMIC, so that the waveguide can be coupled to the active and passive devices of the MMIC. First, a patterned metallization layer is formed on a substrate. A mold of a waveguide is fabricated by masking and then etching another metallization layer. The mold is turned over face down on the patterned metallization layer and bonded to the patterned metallization layer, Then, any unnecessary material is etched away.
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Wolf., S., et al., Silicon Processing, Lattice Press, 1986, vol. 1, pp. 4409, 427-446.
Lu Xiaojia J.
Rhodes David L.
Woolard Dwight L.
Anderson William H.
Quach T. N.
The United States of America as represented by the Secretary of
Zelenka Michael
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