Method of fabricating A1N anti-reflection coating on metal layer

Details Method of fabricating A1N anti-reflection coating on metal layer Method of fabricating A1N anti-reflection coating on metal layer

1997-02-25

2000-01-25

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438652, 438687, 438688, 438952, 438913, 438907, H01L 214763

Patent

active

060178167

ABSTRACT:
A method of fabricating notching free metal interconnection lines by utilizing aluminum nitride (AlN) as an anti-reflection coating. First, field oxide regions are formed on a semiconductor silicon wafer. Then, electrical element structures such as transistor, capacitor and resistor are formed on the predetermined area. Next, a barrier layer, a metal layer and an anti-reflection layer are successively deposited overlaying the entire silicon wafer surface. Next, the photoresist pattern is formed by the conventional lithography technique. By using photoresist pattern as an etching protection mask, the barrier layer, metal layer and anti-reflection layer are also patterned to form metal interconnection lines. Thereafter, the photoresist is stripped by oxygen plasma and sulfuric acid.

REFERENCES:
patent: 5525542 (1996-06-01), Maniar et al.

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