Method of fabricating a via attached to a bond pad utilizing...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S622000, C029S874000, C029S884000, C257S773000, C257S775000, C257SE23010, C257SE23012, C257SE23037, C257SE23040, C257SE23145, C174S261000, C361S767000

Reexamination Certificate

active

07638419

ABSTRACT:
Various embodiments include a method of forming an interconnect comprising forming at least two vias in a substrate, forming a conductive pad on a surface of the substrate, forming at least one tapered conductive segment on the surface of the substrate coupled to the conductive pad, wherein only a first via of the at least two vias is formed substantially beneath the conductive pad and is coupled to the conductive pad, a second via of the at least two vias is coupled to the conductive pad by a first one of the at least one tapered conductive segments, the first one of the tapered conductive segments having a first end having a first width and a second end having a second width, the first end being connected to the second via and the second end being connected to the conductive pad, the first width being less than the second width.

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