Semiconductor device manufacturing: process – Masking – Radiation resist
Reexamination Certificate
2005-04-19
2005-04-19
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Masking
Radiation resist
C438S948000, C438S945000, C257S284000
Reexamination Certificate
active
06881688
ABSTRACT:
A method of fabricating a vertically profiled electrode like a T-gate40on a semiconductor substrate20is described. The method comprises providing a resist structure34on the substrate20, the resist structure34containing at least a first resist pattern24′ arranged on the substrate20and having a first opening26, the first resist being negative resist, and a second resist pattern32having a second opening30surrounding the first opening26. The vertical profile of the gate electrode40is defined by the contours and the relative location of the first and the second opening26, 30. On the resist structure34a metal38is deposited and lift-off is performed to remove the second resist32together with the metal38deposited thereon.
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Communication from the European Patent Office dated Oct. 12, 2004 in corresponding application No. 02 001 998.
Novacek Christy
Zarabian Amir
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