Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-18
2006-07-18
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S401000
Reexamination Certificate
active
07078764
ABSTRACT:
The vertical insulated gate transistor includes, on a semiconductor substrate, a vertical pillar incorporating one of the source and drain regions at the top, a gate dielectric layer situated on the flanks of the pillar and on the top surface of the substrate, and a semiconductor gate resting on the gate dielectric layer. The other of the source and drain regions is in the bottom part of the pillar PIL and the insulated gate includes an isolated external portion15resting on the flanks of the pillar and an isolated internal portion14situated inside the pillar between the source and drain regions. The isolated internal portion is separated laterally from the isolated external portion by two connecting semiconductor regions PL1,PL2extending between the source and drain regions, and forming two very fine pillars.
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French Preliminary Search Report dated Feb. 6, 2002 for French Application No. 0104437.
Josse Emmanuel
Skotnicki Thomas
Au Bac H.
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Gibbons Jon A.
Jorgenson Lisa K.
Smith Zandra V.
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