Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-01
2005-03-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000, C257S329000, C257S330000, C257S344000, C257S408000
Reexamination Certificate
active
06861684
ABSTRACT:
The vertical transistor includes, on a semiconductor substrate, a vertical pillar5having one of the source and drain regions at the top, the other of the source and drain regions being situated in the substrate at the periphery of the pillar, a gate dielectric layer7situated on the flanks of the pillar and on the top surface of the substrate, and a semiconductor gate resting on the gate dielectric layer. The gate includes a semiconductor block having a first region800resting on the gate dielectric layer7and a second region90facing at least portions of the source and drain regions and separated from those source and drain region portions by dielectric cavities14S,14D.
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patent: 5576245 (1996-11-01), Cogan et al.
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Preliminary Search Report dated Feb. 4, 2002 for French Application No. 0104436.
Josse Emmanuel
Skotnicki Thomas
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Gibbons Jon A.
Jorgenson Lisa K.
Nelms David
STMicroelectronics S.A.
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