Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-20
2007-02-20
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S009000, C438S197000, C438S217000, C977S734000, C977S742000, C977S749000, C977S815000, C977S755000, C977S938000, C977S855000
Reexamination Certificate
active
10852891
ABSTRACT:
A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.
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Copy of International Search Report and Written Opinion for PCT/US05/18201; mailed Sep. 22, 2006; received Sep. 26, 2006; copy consists of 9 unnumbered pages.
Appenzeller Joerg
Knoch Joachim
Patterson & Sheridan LLP
Tong, Esq. Kin-Wah
Tuchman, Esq. Ido
Wojciechowicz Edward
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