Method of fabricating a thin film transistor using joule...

Details Method of fabricating a thin film transistor using joule... Method of fabricating a thin film transistor using joule...

2010-10-18

2011-11-08

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21412

Reexamination Certificate

active

08053297

ABSTRACT:
A thin film transistor (TFT) having improved characteristics, a method for fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT is constructed with a substrate, a semiconductor layer disposed on the substrate and including a channel region, source and drain regions, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer and corresponding to the channel region, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer. The channel region is made from polycrystalline silicon (poly-Si), and the source and drain regions are made from amorphous silicon (a-Si). The polycrystalline silicon of the channel region is formed by crystallizing amorphous silicon using Joule's heat generated by the gate electrode.

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