Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2009-09-16
2011-12-06
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S149000, C438S289000, C438S514000, C257SE21413, C257SE21414
Reexamination Certificate
active
08071434
ABSTRACT:
Provided is a method of fabricating a thin film transistor including source and drain electrodes, a novel channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The method includes the steps of forming the channel layer using an oxide semiconductor doped with boron; and patterning the channel layer. The channel layer formed is an oxide semiconductor thin film doped with boron. The electrical characteristics and high temperature stability of the thin film transistor are improved remarkably.
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Cheong Woo Seok
Chu Hye Yong
Chung Sung Mook
Hwang Chi Sun
Ryu Min Ki
Electronics and Telecommunications Research Institute
Lee Cheung
Rabin & Berdo P.C.
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